High-Conductance Pathways in Ring-Strained Disilanes by Way of Direct σ-Si-Si to Au Coordination.

نویسندگان

  • Nathaniel T Kim
  • Haixing Li
  • Latha Venkataraman
  • James L Leighton
چکیده

A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single-molecule measurements. Conformationally locked cis diastereomers of bis(sulfide)-anchor-equipped 1,2-disilaacenaphthenes readily form high-conducting junctions in which the two sulfide anchors bind in a bipodal fashion to one gold electrode, providing enough stability for a stable electrical contact between the Si-Si σ bond and the other electrode.

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عنوان ژورنال:
  • Journal of the American Chemical Society

دوره 138 36  شماره 

صفحات  -

تاریخ انتشار 2016